Method of forming a semiconductor layer

Invention Grant

US07972922B2 Method of forming a semiconductor layer 有权

Title translation: 形成半导体层的方法

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Patent Title: Method of forming a semiconductor layer
Patent Title (中): 形成半导体层的方法
Application No.: US12275659

Application Date: 2008-11-21
Publication No.: US07972922B2

Publication Date: 2011-07-05
Inventor: Hunter J. Martinez , John J. Hackenberg , Jill Hildreth , Ross E. Noble
Applicant: Hunter J. Martinez , John J. Hackenberg , Jill Hildreth , Ross E. Noble
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Main IPC: H01L21/8238
IPC: H01L21/8238

Abstract:

A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.

Abstract(Chinese):

一种形成半导体层的方法，其在一个实施例中是光电检测器的一部分，包括形成硅形状，施加臭氧水，在低于600摄氏度的温度下去除第一氧化物层，以及外延生长锗。硅形状具有暴露的顶面。臭氧水被施加到顶部表面并且在顶部表面上形成第一氧化物层。锗在顶面生长。

Public/Granted literature

US20100129952A1 METHOD OF FORMING A SEMICONDUCTOR LAYER Public/Granted day:2010-05-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS