Invention Grant
- Patent Title: Non-volatile memory device and method of manufacturing the same
- Patent Title (中): 非易失性存储器件及其制造方法
-
Application No.: US11605317Application Date: 2006-11-29
-
Publication No.: US07972923B2Publication Date: 2011-07-05
- Inventor: Jung-Hyun Park , Jung-Geun Jee , Hyoeng-Ki Kim , Yong-Woo Hyung , Won-Jun Jang
- Applicant: Jung-Hyun Park , Jung-Geun Jee , Hyoeng-Ki Kim , Yong-Woo Hyung , Won-Jun Jang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0101158 20061018
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.
Public/Granted literature
- US20080105915A1 Non-volatile memory device and method of manufacturing the same Public/Granted day:2008-05-08
Information query
IPC分类:
