Invention Grant
- Patent Title: Method of manufacturing a nonvolatile semiconductor memory device
- Patent Title (中): 制造非易失性半导体存储器件的方法
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Application No.: US12540663Application Date: 2009-08-13
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Publication No.: US07972927B2Publication Date: 2011-07-05
- Inventor: Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa
- Applicant: Ryota Fujitsuka , Katsuyuki Sekine , Yoshio Ozawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-208945 20080814
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3205 ; H01L21/4763
Abstract:
According to a method of manufacturing a MONOS nonvolatile semiconductor memory device, a tunnel insulating film, a charge storage layer, a block insulating film containing a metal oxide and a control gate electrode are stacked on a semiconductor substrate. Heat treatment is carried out in an atmosphere containing an oxidizing gas after the tunnel insulating film, the charge storage layer and the block insulating film are stacked on the semiconductor substrate. Thereafter, the control gate electrode is formed on the block insulating film.
Public/Granted literature
- US20100041206A1 METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-02-18
Information query
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