Invention Grant
US07972938B2 Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe
有权
从CdZnTe底物中分离CdZnTe层的方法用于HgCdTe的生长
- Patent Title: Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe
- Patent Title (中): 从CdZnTe底物中分离CdZnTe层的方法用于HgCdTe的生长
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Application No.: US12479119Application Date: 2009-06-05
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Publication No.: US07972938B2Publication Date: 2011-07-05
- Inventor: Rabi S. Bhattacharya , Yongli Xu
- Applicant: Rabi S. Bhattacharya , Yongli Xu
- Applicant Address: US OH Dayton
- Assignee: UES, Inc.
- Current Assignee: UES, Inc.
- Current Assignee Address: US OH Dayton
- Agency: Dinsmore & Shohl LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.
Public/Granted literature
- US20090305459A1 Methods of Splitting CdZnTe Layers from CdZnTe Substrates for the Growth of HgCdTe Public/Granted day:2009-12-10
Information query
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