Invention Grant
- Patent Title: Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film
- Patent Title (中): 通过使用外延硅膜降低升级冶金级硅晶片的金属杂质的方法
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Application No.: US12887665Application Date: 2010-09-22
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Publication No.: US07972942B1Publication Date: 2011-07-05
- Inventor: Tsun-Neng Yang
- Applicant: Tsun-Neng Yang
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Agency: Lee & Hayes, PLLC
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through heat treating diffusion, the epitaxial Si film is used to form sink positions for the metal impurities in the UMG Si wafer. By using concentration gradient, temperature gradient and interface defect, individual and comprehensive effects are built for enhancing purity of the UMG Si wafer from 5N to 6N. Thus, a low-cost Si wafer can be fabricated for Si-based solar cell through a simple, fast and effective method.
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