Invention Grant
US07972945B2 Plasma doping apparatus and method, and method for manufacturing semiconductor device
失效
等离子体掺杂装置和方法以及半导体装置的制造方法
- Patent Title: Plasma doping apparatus and method, and method for manufacturing semiconductor device
- Patent Title (中): 等离子体掺杂装置和方法以及半导体装置的制造方法
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Application No.: US12808285Application Date: 2008-12-11
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Publication No.: US07972945B2Publication Date: 2011-07-05
- Inventor: Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno
- Applicant: Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-339665 20071228
- International Application: PCT/JP2008/003705 WO 20081211
- International Announcement: WO2009/084160 WO 20090709
- Main IPC: H01L21/26
- IPC: H01L21/26
Abstract:
A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.
Public/Granted literature
- US20100297836A1 PLASMA DOPING APPARATUS AND METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-11-25
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