Invention Grant
- Patent Title: Method for forming bit lines for semiconductor devices
- Patent Title (中): 用于形成半导体器件的位线的方法
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Application No.: US12880541Application Date: 2010-09-13
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Publication No.: US07972948B2Publication Date: 2011-07-05
- Inventor: Weidong Qian , Mark T. Ramsbey , Tazrien Kamal
- Applicant: Weidong Qian , Mark T. Ramsbey , Tazrien Kamal
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L21/22
- IPC: H01L21/22
Abstract:
A memory device includes a number of memory cells and a number of bit lines. Each of the bit lines includes a first region having a first width and a first depth and a second region having a second width and a second depth, where the first width is less than the second width. The first region may include an n-type impurity and the second region may include a p-type impurity.
Public/Granted literature
- US20100330762A1 METHOD FOR FORMING BIT LINES FOR SEMICONDUCTOR DEVICES Public/Granted day:2010-12-30
Information query
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