Invention Grant
- Patent Title: Compound semiconductor light-emitting device and method for manufacturing the same
- Patent Title (中): 化合物半导体发光器件及其制造方法
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Application No.: US12095175Application Date: 2007-12-06
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Publication No.: US07972952B2Publication Date: 2011-07-05
- Inventor: Naoki Fukunaga , Hironao Shinohara
- Applicant: Naoki Fukunaga , Hironao Shinohara
- Applicant Address: JP Tokoy
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokoy
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-333582 20061211
- International Application: PCT/JP2007/073989 WO 20071206
- International Announcement: WO2008/072681 WO 20080619
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
Public/Granted literature
- US20090267109A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-10-29
Information query
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