Invention Grant
US07972952B2 Compound semiconductor light-emitting device and method for manufacturing the same 有权
化合物半导体发光器件及其制造方法

  • Patent Title: Compound semiconductor light-emitting device and method for manufacturing the same
  • Patent Title (中): 化合物半导体发光器件及其制造方法
  • Application No.: US12095175
    Application Date: 2007-12-06
  • Publication No.: US07972952B2
    Publication Date: 2011-07-05
  • Inventor: Naoki FukunagaHironao Shinohara
  • Applicant: Naoki FukunagaHironao Shinohara
  • Applicant Address: JP Tokoy
  • Assignee: Showa Denko K.K.
  • Current Assignee: Showa Denko K.K.
  • Current Assignee Address: JP Tokoy
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2006-333582 20061211
  • International Application: PCT/JP2007/073989 WO 20071206
  • International Announcement: WO2008/072681 WO 20080619
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Compound semiconductor light-emitting device and method for manufacturing the same
Abstract:
A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
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