Invention Grant
- Patent Title: Three dimensional semiconductor memory device and method of fabricating the same
- Patent Title (中): 三维半导体存储器件及其制造方法
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Application No.: US12901025Application Date: 2010-10-08
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Publication No.: US07972955B2Publication Date: 2011-07-05
- Inventor: Sukhun Choi , Kyunghyun Kim , ChangSup Mun , Byoungkeun Son
- Applicant: Sukhun Choi , Kyunghyun Kim , ChangSup Mun , Byoungkeun Son
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0099370 20091019
- Main IPC: H01L21/8247
- IPC: H01L21/8247
Abstract:
Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.
Public/Granted literature
- US20110092038A1 THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-04-21
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