Invention Grant
- Patent Title: Method for manufacturing thin film
- Patent Title (中): 薄膜制造方法
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Application No.: US12886240Application Date: 2010-09-20
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Publication No.: US07972960B1Publication Date: 2011-07-05
- Inventor: Kyoichi Suguro , Yoshitaka Tsunashima
- Applicant: Kyoichi Suguro , Yoshitaka Tsunashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-021673 20100202
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for manufacturing a thin film includes: applying a liquid to a surface of a processing target member having at least one of a trench and a concave portion. The liquid includes a solvent and at least one of fine particles of a metal, fine particles of a semiconductor, fine particles containing a metal oxide, and fine particles containing a semiconductor oxide. A first heat treatment is included for volatilizing the solvent of the liquid applied to the surface of the processing target member. The fine particles are remained on the surface of the processing target member. A second heat treatment is also included for heating the fine particles by using microwave irradiation. At least one of the trench and the concave portion is filled with the thin film containing the fine particles or a component of the fine particles.
Information query
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