Etching of tungsten selective to titanium nitride

Invention Grant

US07972966B2 Etching of tungsten selective to titanium nitride 有权

Title translation: 钨选择性蚀刻氮化钛

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Patent Title: Etching of tungsten selective to titanium nitride
Patent Title (中): 钨选择性蚀刻氮化钛
Application No.: US12468297

Application Date: 2009-05-19
Publication No.: US07972966B2

Publication Date: 2011-07-05
Inventor: Matthew J. Breitwisch , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Brandon Yee
Applicant: Matthew J. Breitwisch , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Brandon Yee
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent Vazken Alexanian
Main IPC: H01L21/311
IPC: H01L21/311

Etching of tungsten selective to titanium nitride

Abstract:

The present invention in one embodiment provides an etch method that includes providing a structure including a tungsten (W) portion and a titanium nitride (TiN) portion; applying a first etch feed gas of sulfur hexafluoride (SF6) and oxygen (O2), in which the ratio of sulfur hexafluoride (SF6) to oxygen (O2) ranges from 1:3.5 to 1:4.5; and applying a second etch feed gas of nitrogen trifluoride (NF3), helium (He) and chlorine (Cl2), in which the ratio of nitrogen trifluoride (NF3) to chlorine (Cl2) ranges from 1:5 to 2:5 and the ratio of helium (He) to nitrogen trifluoride (NF3) and chlorine (Cl2) ranges from 1:3 to 1:1.

Abstract(Chinese):

本发明在一个实施例中提供了一种蚀刻方法，其包括提供包括钨（W）部分和氮化钛（TiN）部分的结构; 施加六氟化硫（SF 6）和氧（O 2）的第一蚀刻进料气体，其中六氟化硫（SF 6）与氧气（O 2）的比率为1:3.5至1:4.5; 并施加三氟化氮（NF3）与氯（Cl2）的比率为1:5〜2:5的三氟化氮（NF3），氦（He）和氯（Cl2）的第二蚀刻进料气体，氦（He）与三氟化氮（NF 3）和氯（Cl 2）的比例为1:3-1:1。

Public/Granted literature

US20100297848A1 ETCHING OF TUNGSTEN SELECTIVE TO TITANIUM NITRIDE Public/Granted day:2010-11-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀