Invention Grant
- Patent Title: Gallium lanthanide oxide films
- Patent Title (中): 镓镧系氧化物膜
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Application No.: US11329025Application Date: 2006-01-10
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Publication No.: US07972974B2Publication Date: 2011-07-05
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/4763 ; C23C16/00
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.
Public/Granted literature
- US20070158765A1 Gallium lanthanide oxide films Public/Granted day:2007-07-12
Information query
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