Invention Grant
US07972975B2 Method for forming a dielectric film and novel precursors for implementing said method
失效
形成电介质膜的方法和用于实现所述方法的新型前体
- Patent Title: Method for forming a dielectric film and novel precursors for implementing said method
- Patent Title (中): 形成电介质膜的方法和用于实现所述方法的新型前体
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Application No.: US11917931Application Date: 2006-06-21
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Publication No.: US07972975B2Publication Date: 2011-07-05
- Inventor: Christian Dussarrat
- Applicant: Christian Dussarrat
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Priority: FR0551675 20050621
- International Application: PCT/FR2006/001495 WO 20060621
- International Announcement: WO2006/136741 WO 20061228
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C n —Si chain where n=1.
Public/Granted literature
- US20100130025A1 METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD Public/Granted day:2010-05-27
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