Invention Grant
- Patent Title: Organic-semiconductor-based infrared receiving device
- Patent Title (中): 基于有机半导体的红外接收装置
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Application No.: US12385967Application Date: 2009-04-24
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Publication No.: US07973308B2Publication Date: 2011-07-05
- Inventor: Hsin-Fei Meng , Sheng-Fu Horng , Chia-Ming Yang
- Applicant: Hsin-Fei Meng , Sheng-Fu Horng , Chia-Ming Yang
- Applicant Address: TW Hsinchu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu
- Agency: Oliff & Berridge, PLC
- Priority: TW97118809A 20080521
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.
Public/Granted literature
- US20090289247A1 Organic-semiconductor-based infrared receiving device Public/Granted day:2009-11-26
Information query
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