Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US12428622Application Date: 2009-04-23
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Publication No.: US07973329B2Publication Date: 2011-07-05
- Inventor: Sang Youl Lee
- Applicant: Sang Youl Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0038117 20080424
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L21/12

Abstract:
Embodiments provides a semiconductor light emitting device, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, an insulator on one side of the second electrode layer, and a first electrode electrically connected to a one end of the first conductive semiconductor layer, on the insulator.
Public/Granted literature
- US20090267106A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-10-29
Information query
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