Invention Grant
US07973335B2 Field-effect transistor having group III nitride electrode structure
失效
具有III族氮化物电极结构的场效应晶体管
- Patent Title: Field-effect transistor having group III nitride electrode structure
- Patent Title (中): 具有III族氮化物电极结构的场效应晶体管
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Application No.: US10538739Application Date: 2003-12-15
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Publication No.: US07973335B2Publication Date: 2011-07-05
- Inventor: Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
- Applicant: Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2002-364405 20021216
- International Application: PCT/JP03/16034 WO 20031215
- International Announcement: WO2004/055905 WO 20040701
- Main IPC: H01L31/072
- IPC: H01L31/072
Abstract:
A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.
Public/Granted literature
- US20060102929A1 Field-effect transistor Public/Granted day:2006-05-18
Information query
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