Invention Grant
- Patent Title: Fuse of semiconductor device
- Patent Title (中): 半导体器件保险丝
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Application No.: US12729959Application Date: 2010-03-23
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Publication No.: US07973341B2Publication Date: 2011-07-05
- Inventor: Hyung Jin Park , Won Ho Shin
- Applicant: Hyung Jin Park , Won Ho Shin
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0137981 20071226
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse blowing process, thereby improving repair efficiency.
Public/Granted literature
- US20100176911A1 Fuse of Semiconductor Device Public/Granted day:2010-07-15
Information query
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