Invention Grant
US07973355B2 Nonvolatile memory devices with multiple layers having band gap relationships among the layers
有权
具有层之间具有带隙关系的多层的非易失性存储器件
- Patent Title: Nonvolatile memory devices with multiple layers having band gap relationships among the layers
- Patent Title (中): 具有层之间具有带隙关系的多层的非易失性存储器件
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Application No.: US12216945Application Date: 2008-07-14
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Publication No.: US07973355B2Publication Date: 2011-07-05
- Inventor: Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
- Applicant: Seung-Jae Baik , Hong-Suk Kim , Si-Young Choi , Ki-Hyun Hwang , Sang-Jin Hyun
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0070152 20070712
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
Public/Granted literature
- US20090014781A1 Nonvolatile memory devices and methods for fabricating nonvolatile memory devices Public/Granted day:2009-01-15
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