Invention Grant
- Patent Title: Nonvolatile semiconductor memory and method of manufacturing the same
- Patent Title (中): 非易失性半导体存储器及其制造方法
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Application No.: US12285167Application Date: 2008-09-30
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Publication No.: US07973356B2Publication Date: 2011-07-05
- Inventor: Takeshi Kikuchi
- Applicant: Takeshi Kikuchi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-261391 20071004
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/8247
Abstract:
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.
Public/Granted literature
- US20090090962A1 Nonvolatile semiconductor memory and method of manufacturing the same Public/Granted day:2009-04-09
Information query
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