Invention Grant
- Patent Title: Depletable cathode low charge storage diode
- Patent Title (中): 可消耗阴极低电荷存储二极管
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Application No.: US12754923Application Date: 2010-04-06
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Publication No.: US07973360B2Publication Date: 2011-07-05
- Inventor: James Douglas Beasom
- Applicant: James Douglas Beasom
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: MH2 Technology Law Group LLP
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
An integrated circuit device comprising a diode and a method of making an integrated circuit device comprising a diode are provided. The diode can comprise an island of a first conductivity type, a first region of a second conductivity type formed in the island, and a cathode diffusion contact region doped to the second conductivity type disposed in the first region. The diode can also comprise a cathode contact electrically contacting the cathode diffusion contact region, an anode disposed in the island, an anode contact electrically contacting the anode, and a first extension region doped to the first conductivity type disposed at a surface junction between the first region and the island.
Public/Granted literature
- US20100193895A1 DEPLETABLE CATHODE LOW CHARGE STORAGE DIODE Public/Granted day:2010-08-05
Information query
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