A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.