Invention Grant
US07973380B2 Method for providing metal extension in backside illuminated sensor for wafer level testing
有权
用于在背面照明传感器中提供金属延伸用于晶片级测试的方法
- Patent Title: Method for providing metal extension in backside illuminated sensor for wafer level testing
- Patent Title (中): 用于在背面照明传感器中提供金属延伸用于晶片级测试的方法
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Application No.: US11532674Application Date: 2006-09-18
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Publication No.: US07973380B2Publication Date: 2011-07-05
- Inventor: Tzu-Hsuan Hsu , Dun-Nian Yaung
- Applicant: Tzu-Hsuan Hsu , Dun-Nian Yaung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.
Public/Granted literature
- US20070117253A1 METHOD FOR PROVIDING METAL EXTENSION IN BACKSIDE ILLUMINATED SENSOR FOR WAFER LEVEL TESTING Public/Granted day:2007-05-24
Information query
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