Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11782390Application Date: 2007-07-24
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Publication No.: US07973382B2Publication Date: 2011-07-05
- Inventor: Tetsuo Takahashi
- Applicant: Tetsuo Takahashi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-049445 20070228
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A gate electrode 20 and first field plates 22a to 22d and 23 are provided on a field oxide film 19. The gate electrode 20 and first field plates 22a to 22d and 23 are covered with an insulating film 24. A high-voltage wiring conductor 28 is provided on the insulating film 24. A shielding electrode 29 is provided between the first field plate 22a positioned closest to a source side and the high-voltage wiring conductor 28.
Public/Granted literature
- US20080203496A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-08-28
Information query
IPC分类:
