Invention Grant
- Patent Title: Phase change memory cell including multiple phase change material portions
- Patent Title (中): 相变存储单元包括多个相变材料部分
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Application No.: US11265377Application Date: 2005-11-02
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Publication No.: US07973384B2Publication Date: 2011-07-05
- Inventor: Thomas Happ , Jan Boris Philipp
- Applicant: Thomas Happ , Jan Boris Philipp
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A memory cell includes a first electrode, a second electrode, and a first portion of phase-change material contacting the first electrode. The memory cell includes a second portion of phase-change material contacting the second electrode and a third portion of phase-change material between the first portion and the second portion. A phase-change material composition of the third portion and the second portion gradually transitions from the third portion to the second portion.
Public/Granted literature
- US20070097739A1 Phase change memory cell including multiple phase change material portions Public/Granted day:2007-05-03
Information query
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