Invention Grant
- Patent Title: Semiconductor structures including square cuts in single crystal silicon
- Patent Title (中): 包括单晶硅方形切割的半导体结构
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Application No.: US12565557Application Date: 2009-09-23
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Publication No.: US07973388B2Publication Date: 2011-07-05
- Inventor: Whonchee Lee , Janos Fucsko , David H. Wells
- Applicant: Whonchee Lee , Janos Fucsko , David H. Wells
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.
Public/Granted literature
- US20100013061A1 SEMICONDUCTOR STRUCTURES INCLUDING SQUARE CUTS IN SINGLE CRYSTAL SILICON Public/Granted day:2010-01-21
Information query
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