Invention Grant
- Patent Title: Modifier for low dielectric constant film, and method for production thereof
- Patent Title (中): 低介电常数膜用改性剂及其制造方法
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Application No.: US12518003Application Date: 2007-07-11
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Publication No.: US07973390B2Publication Date: 2011-07-05
- Inventor: Tsuyoshi Ogawa , Mitsuya Ohashi
- Applicant: Tsuyoshi Ogawa , Mitsuya Ohashi
- Applicant Address: JP Ube-shi
- Assignee: Central Glass Company, Limited
- Current Assignee: Central Glass Company, Limited
- Current Assignee Address: JP Ube-shi
- Agency: Crowell & Moring LLP
- Priority: JP2007-026783 20070206
- International Application: PCT/JP2007/063777 WO 20070711
- International Announcement: WO2008/099522 WO 20080821
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F7/10
Abstract:
A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3 (1) in which R is a C1-C4 alkyl group, and n is an integer from 0 to 3.
Public/Granted literature
- US20100323530A1 MODIFIER FOR LOW DIELECTRIC CONSTANT FILM, AND METHOD FOR PRODUCTION THEREOF Public/Granted day:2010-12-23
Information query
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