Invention Grant
- Patent Title: Semiconductor chip passivation structures and methods of making the same
- Patent Title (中): 半导体芯片钝化结构及制作方法相同
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Application No.: US12862053Application Date: 2010-08-24
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Publication No.: US07973408B2Publication Date: 2011-07-05
- Inventor: Roden R. Topacio
- Applicant: Roden R. Topacio
- Applicant Address: CA Markham
- Assignee: ATI Technologies ULC
- Current Assignee: ATI Technologies ULC
- Current Assignee Address: CA Markham
- Agent Timothy M. Honeycutt
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/60
Abstract:
Various semiconductor chip passivation structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes applying a polymeric passivation layer to a side of a semiconductor chip. The side of the semiconductor chip includes plural conductor pads. Plural openings are formed in the polymeric passivation layer to expose the plural conductor pads. Plural conductor structures are formed on the plural conductor pads.
Public/Granted literature
- US20100314759A1 SEMICONDUCTOR CHIP PASSIVATION STRUCTURES AND METHODS OF MAKING THE SAME Public/Granted day:2010-12-16
Information query
IPC分类:
