Invention Grant
- Patent Title: Method for fabrication of a semiconductor element and structure thereof
- Patent Title (中): 半导体元件的制造方法及其结构
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Application No.: US12435661Application Date: 2009-05-05
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Publication No.: US07973559B2Publication Date: 2011-07-05
- Inventor: Zvi Or-Bach , James M. Tour , Alexander Sinitskiy , Jun Yao , Elvira Beitler
- Applicant: Zvi Or-Bach , James M. Tour , Alexander Sinitskiy , Jun Yao , Elvira Beitler
- Applicant Address: US TX Houston
- Assignee: William Marsh Rice University
- Current Assignee: William Marsh Rice University
- Current Assignee Address: US TX Houston
- Agency: Winstead PC
- Main IPC: H03K19/177
- IPC: H03K19/177

Abstract:
Re-programmable antifuses and structures utilizing re-programmable antifuses are presented. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Other embodiments of antifuses include an initializing step prior to programming.
Public/Granted literature
- US20100283504A1 METHOD FOR FABRICATION OF A SEMICONDUCTOR ELEMENT AND STRUCTURE THEREOF Public/Granted day:2010-11-11
Information query
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