Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12615876Application Date: 2009-11-10
-
Publication No.: US07973590B2Publication Date: 2011-07-05
- Inventor: Sang-Hoon Shin , Hyung-Dong Lee , Jun-Gi Choi
- Applicant: Sang-Hoon Shin , Hyung-Dong Lee , Jun-Gi Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0059827 20090701
- Main IPC: H01H85/00
- IPC: H01H85/00

Abstract:
A semiconductor device includes a first transmission line and a second transmission line disposed at different layers; a contact fuse coupled with the first transmission line and the second transmission line; a power driver configured to apply an electric stress to the contact fuse; and a fuse state output unit configured to output a fuse state signal having a logic level corresponding to an electric connection state of the contact fuse.
Public/Granted literature
- US20110001552A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-01-06
Information query