Invention Grant
- Patent Title: Semiconductor package and semiconductor device
- Patent Title (中): 半导体封装和半导体器件
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Application No.: US12289682Application Date: 2008-10-31
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Publication No.: US07973719B2Publication Date: 2011-07-05
- Inventor: Hatsuhide Igarashi
- Applicant: Hatsuhide Igarashi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-285991 20071102
- Main IPC: H01Q1/38
- IPC: H01Q1/38

Abstract:
A semiconductor package includes an insulating substrate configured to be provided for mounting a semiconductor chip which processes a signal with a frequency in a radio frequency band. The insulating substrate includes a first external connecting electrode, a second external connecting electrode, and a partial antenna wiring. The first external connecting electrode and the second external connecting electrode are connected with the partial antenna wiring. Each of the first external connecting electrode and the second external connecting electrode is an electrode to be connected with an external antenna pattern.
Public/Granted literature
- US20090115041A1 Semiconductor package and semiconductor device Public/Granted day:2009-05-07
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