An integrated circuit with an electrostatic discharge protection circuit includes a first power pad, a second power pad, at least a circuit module, and a power clamp circuit. The circuit module includes a signal pad, an internal circuit and a first bipolar transistor. A first parasitical resistance is coupled between a collector of the first bipolar transistor and the second power pad. There is at least a metal-oxide semiconductor (MOS) transistor and at least a first parasitical bipolar transistor included within the power clamp circuit.