Invention Grant
- Patent Title: Common gate connected high voltage transient blocking unit
- Patent Title (中): 共栅连接高电压瞬态阻断单元
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Application No.: US12283430Application Date: 2008-09-10
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Publication No.: US07974061B2Publication Date: 2011-07-05
- Inventor: Andrew J. Morrish
- Applicant: Andrew J. Morrish
- Applicant Address: US CA Riverside
- Assignee: Bourns, Inc.
- Current Assignee: Bourns, Inc.
- Current Assignee Address: US CA Riverside
- Agency: Lumen Patent Firm
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
When a series protective element such as a transient blocking unit (TBU) is used in combination with a shunt protective element such as a gas discharge tube (GDT), firing of the GDT can cause a transient having the potential to damage the TBU. This problem can be alleviated by placing a TBU core in series between depletion mode transistors having their gates connected. With this arrangement, the GDT transient causes a transient in the TBU circuit that has the effect of switching the transistors around the TBU hard off, thereby protecting the TBU from the GDT transient.
Public/Granted literature
- US20090122456A1 Common gate connected high voltage transient blocking unit Public/Granted day:2009-05-14
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