Invention Grant
- Patent Title: Flash memory device capable of reduced programming time
- Patent Title (中): 闪存设备能够减少编程时间
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Application No.: US12620758Application Date: 2009-11-18
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Publication No.: US07974128B2Publication Date: 2011-07-05
- Inventor: Min-Gun Park , Jin-Wook Lee , Sang-Won Hwang
- Applicant: Min-Gun Park , Jin-Wook Lee , Sang-Won Hwang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0050470 20050613
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04
Abstract:
A flash memory device including a high voltage generator circuit that is adapted to supply a program voltage having a target voltage to a selected word line is provided. The flash memory device is adapted to terminate the program interval in accordance with when the program voltage has been restored to the target voltage after dropping below the target voltage. A method for operating the flash memory device is also provided.
Public/Granted literature
- US20100067303A1 FLASH MEMORY DEVICE CAPABLE OF REDUCED PROGRAMMING TIME Public/Granted day:2010-03-18
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