Invention Grant
- Patent Title: Robust sensing circuit and method
- Patent Title (中): 鲁棒的感应电路和方法
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Application No.: US12349417Application Date: 2009-01-06
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Publication No.: US07974133B2Publication Date: 2011-07-05
- Inventor: Mohan Vamsi Dunga , Man Mui , Masaaki Higashitani
- Applicant: Mohan Vamsi Dunga , Man Mui , Masaaki Higashitani
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A sense amplifier is disclosed. One embodiment is a sensing circuit that includes a sensing device and a sense transistor coupled to the sensing device. A first switch that is coupled to the sense transistor and to the sensing device causes the sensing device to be charged to a first voltage that is a function of the threshold voltage of the sense transistor. One or more second switches that are coupled to the sensing device and to a target element. The second switches couple the sensing device to the target element to modify the first voltage on the sensing device and decouple the target element from the sensing device during a sense phase in which the modified first voltage is applied to the sense transistor. A condition of the target element is determined based on whether or not the sense transistor turns on in response to applying the modified first voltage to the sense transistor.
Public/Granted literature
- US20100172187A1 ROBUST SENSING CIRCUIT AND METHOD Public/Granted day:2010-07-08
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