Invention Grant
- Patent Title: Non-volatile memory generating different read voltages
- Patent Title (中): 产生不同读取电压的非易失性存储器
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Application No.: US12277337Application Date: 2008-11-25
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Publication No.: US07974139B2Publication Date: 2011-07-05
- Inventor: Soon-young Kim , Young-joon Choi
- Applicant: Soon-young Kim , Young-joon Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0122166 20071128
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
In one aspect, a non-volatile memory is provided which includes a plurality of m-bit non-volatile memory cells and a plurality of n-bit non-volatile memory cells, where 1≦m
Public/Granted literature
- US20090138652A1 NON-VOLATILE MEMORY GENERATING DIFFERENT READ VOLTAGES Public/Granted day:2009-05-28
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