Invention Grant
- Patent Title: Memory with tunable sleep diodes
- Patent Title (中): 带可调谐睡眠二极管的内存
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Application No.: US11965639Application Date: 2007-12-27
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Publication No.: US07974144B2Publication Date: 2011-07-05
- Inventor: Michael Patrick Clinton
- Applicant: Michael Patrick Clinton
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Dawn V. Stephens; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A system and are described as to adjusting voltages in a memory device, while the device is in sleep mode, to prevent or minimize voltage or current leakage of the device.
Public/Granted literature
- US20080186794A1 MEMORY WITH TUNABLE SLEEP DIODES Public/Granted day:2008-08-07
Information query
