Invention Grant
- Patent Title: Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering
- Patent Title (中): 结合了具有减小的结电容和漏极引起的屏障降低的半导体器件结构
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Application No.: US11875013Application Date: 2007-10-19
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Publication No.: US07984408B2Publication Date: 2011-07-19
- Inventor: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman , Haining Yang
- Applicant: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman , Haining Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Wood, Herron & Evans, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/76

Abstract:
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes semiconductor device structures characterized by reduced junction capacitance and drain induced barrier lowering. The semiconductor device structure of the design structure includes a semiconductor layer and a dielectric layer disposed between the semiconductor layer and the substrate. The dielectric layer includes a first dielectric region with a first dielectric constant and a second dielectric region with a second dielectric constant that is greater than the first dielectric constant.
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