Invention Grant
US07985529B2 Mask patterns including gel layers for semiconductor device fabrication
有权
掩模图案包括用于半导体器件制造的凝胶层
- Patent Title: Mask patterns including gel layers for semiconductor device fabrication
- Patent Title (中): 掩模图案包括用于半导体器件制造的凝胶层
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Application No.: US12496185Application Date: 2009-07-01
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Publication No.: US07985529B2Publication Date: 2011-07-26
- Inventor: Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
- Applicant: Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2004-0076350 20040923
- Main IPC: G03F7/11
- IPC: G03F7/11
Abstract:
Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
Public/Granted literature
- US20090263732A1 MASK PATTERNS INCLUDING GEL LAYERS FOR SEMICONDUCTOR DEVICE FABRICATION Public/Granted day:2009-10-22
Information query
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