Invention Grant
- Patent Title: Semiconductor assembly with one metal layer after base metal removal
- Patent Title (中): 半导体组件与贱金属去除后的金属层
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Application No.: US12762960Application Date: 2010-04-19
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Publication No.: US07985631B2Publication Date: 2011-07-26
- Inventor: Tonglong Zhang
- Applicant: Tonglong Zhang
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for packaging an integrated circuit. A barrier metal pattern is disposed on a baseplate. A conductive layer is disposed on the barrier metal pattern. A photoresist having a pattern is applied to the conductive layer. A via is then disposed on the conductive layer. An integrated circuit is coupled to the via and encapsulated. Then, at least a part of the baseplate is removed. An integrated circuit package is produced by the method.
Public/Granted literature
- US20100200970A1 Semiconductor Assembly With One Metal Layer After Base Metal Removal Public/Granted day:2010-08-12
Information query
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