Invention Grant
US07985637B2 Manufacturing method for compound semiconductor device and etching solution
有权
化合物半导体器件和蚀刻溶液的制造方法
- Patent Title: Manufacturing method for compound semiconductor device and etching solution
- Patent Title (中): 化合物半导体器件和蚀刻溶液的制造方法
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Application No.: US12207085Application Date: 2008-09-09
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Publication No.: US07985637B2Publication Date: 2011-07-26
- Inventor: Naoya Okamoto
- Applicant: Naoya Okamoto
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/338
- IPC: H01L21/338

Abstract:
After an n-type AlGaN barrier layer (3) is formed over a substrate (1), an n-type GaN contact layer (4) is formed over the n-type AlGaN barrier layer (3). Next, the n-type GaN contact layer (4) is wet-etched with using an etching solution containing an organic alkali agent and an oxidizer while the n-type GaN contact layer (4) is irradiated with an ultraviolet illumination.
Public/Granted literature
- US20090061576A1 MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE AND ETCHING SOLUTION Public/Granted day:2009-03-05
Information query
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