Invention Grant
- Patent Title: Through-via and method of forming
- Patent Title (中): 通孔和成型方法
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Application No.: US12277455Application Date: 2008-11-25
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Publication No.: US07985655B2Publication Date: 2011-07-26
- Inventor: Bradley P. Smith
- Applicant: Bradley P. Smith
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; Kim Marie Vo
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
In one embodiment, a method of forming a via includes providing a semiconductor substrate, wherein the semiconductor substrate comprises a through-via region, forming isolation openings and a sacrificial feature in the through-via region, filling the isolation openings to form isolation regions, forming a dielectric layer over the semiconductor substrate after filling the isolation openings, forming a first portion of a through-via opening in the dielectric layer, forming a second portion of the through-via opening in the semiconductor substrate, wherein forming the second portion of the through-via opening comprises removing the sacrificial feature, and forming a conductive material in the first portion and the second portion of the through-via opening.
Public/Granted literature
- US20100129981A1 THROUGH-VIA AND METHOD OF FORMING Public/Granted day:2010-05-27
Information query
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