Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12471923Application Date: 2009-05-26
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Publication No.: US07985663B2Publication Date: 2011-07-26
- Inventor: Takao Sato , Soichi Homma , Masaya Shima
- Applicant: Takao Sato , Soichi Homma , Masaya Shima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2008-138296 20080527; JPP2008-280132 20081030
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/495

Abstract:
A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.
Public/Granted literature
- US20090298228A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2009-12-03
Information query
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