Method of making a contact in a semiconductor device

Invention Grant

US07985676B2 Method of making a contact in a semiconductor device 有权

Title translation: 在半导体器件中进行接触的方法

Please log in to see more content

Patent Title: Method of making a contact in a semiconductor device
Patent Title (中): 在半导体器件中进行接触的方法
Application No.: US12693231

Application Date: 2010-01-25
Publication No.: US07985676B2

Publication Date: 2011-07-26
Inventor: Veit Klee , Roman Knoefler , Uwe Paul Schroeder
Applicant: Veit Klee , Roman Knoefler , Uwe Paul Schroeder
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of making a contact in a semiconductor device

Abstract:

To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.

Abstract(Chinese):

为了形成半导体器件，在导电区域上形成绝缘层，并且在绝缘层上形成图案转移层。图案转印层以要形成在绝缘层中的凹槽布局的相反色调被图案化，使得图案转印层保留在要形成凹部的区域上。掩模材料形成在绝缘层上并与图案转印层对准。去除图案转印层的剩余部分，并使用掩模材料作为掩模在绝缘层中蚀刻凹陷。

Public/Granted literature

US20100124820A1 Method of Making a Contact in a Semiconductor Device Public/Granted day:2010-05-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）