Invention Grant
- Patent Title: Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device
- Patent Title (中): 在制造半导体器件期间使用对称光掩模和包括半导体器件的电子系统选择性地形成对称或非对称特征的方法
-
Application No.: US11766931Application Date: 2007-06-22
-
Publication No.: US07985681B2Publication Date: 2011-07-26
- Inventor: Hongbin Zhu , Jeremy Madsen
- Applicant: Hongbin Zhu , Jeremy Madsen
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain.
Public/Granted literature
Information query
IPC分类:
