Invention Grant
- Patent Title: Method of treating a semiconductor substrate
- Patent Title (中): 处理半导体衬底的方法
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Application No.: US12801178Application Date: 2010-05-26
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Publication No.: US07985683B2Publication Date: 2011-07-26
- Inventor: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
- Applicant: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-259636 20081006; JP2009-140992 20090612
- Main IPC: H01L21/312
- IPC: H01L21/312

Abstract:
A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
Public/Granted literature
- US20100240219A1 Method of treating a semiconductor substrate Public/Granted day:2010-09-23
Information query
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