Invention Grant
US07985686B2 Method of forming a nonvolatile memory device using semiconductor nanoparticles
有权
使用半导体纳米颗粒形成非易失性存储器件的方法
- Patent Title: Method of forming a nonvolatile memory device using semiconductor nanoparticles
- Patent Title (中): 使用半导体纳米颗粒形成非易失性存储器件的方法
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Application No.: US11373127Application Date: 2006-03-13
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Publication No.: US07985686B2Publication Date: 2011-07-26
- Inventor: Charles T. Black , Kathryn Wilder Guarini
- Applicant: Charles T. Black , Kathryn Wilder Guarini
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn Intellectual Property Law Group, PLLC
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/8247
Abstract:
A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material.
Public/Granted literature
- US20060163646A1 Nonvolatile memory device using semiconductor nanocrystals and method of forming same Public/Granted day:2006-07-27
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