Invention Grant
- Patent Title: Method of producing phase change memory device
- Patent Title (中): 相变存储器件的制造方法
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Application No.: US12289002Application Date: 2008-10-17
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Publication No.: US07985693B2Publication Date: 2011-07-26
- Inventor: Akiyoshi Seko , Natsuki Sato , Isamu Asano
- Applicant: Akiyoshi Seko , Natsuki Sato , Isamu Asano
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2007-272712 20071019
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller.
Public/Granted literature
- US20090104779A1 Method of producing phase change memory device Public/Granted day:2009-04-23
Information query
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