Invention Grant
US07985694B2 Method for forming pattern, method for manufacturing semiconductor device and semiconductor device
有权
形成图案的方法,制造半导体器件和半导体器件的方法
- Patent Title: Method for forming pattern, method for manufacturing semiconductor device and semiconductor device
- Patent Title (中): 形成图案的方法,制造半导体器件和半导体器件的方法
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Application No.: US12101532Application Date: 2008-04-11
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Publication No.: US07985694B2Publication Date: 2011-07-26
- Inventor: Akhiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
- Applicant: Akhiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-106864 20070416
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.
Public/Granted literature
- US20080251844A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2008-10-16
Information query
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