Invention Grant
- Patent Title: Forming silicon oxide film from RF plasma of oxidizing gas
- Patent Title (中): 由氧化气体的RF等离子体形成氧化硅膜
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Application No.: US12238160Application Date: 2008-09-25
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Publication No.: US07985695B2Publication Date: 2011-07-26
- Inventor: Nobuyuki Endo
- Applicant: Nobuyuki Endo
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-256015 20070928; JP2008-242221 20080922
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
An oxide film formation method comprises steps of: generating a plasma from a gas mixture containing an inert gas and an oxidizing gas whose mixing ratio to the inert gas is higher than 0, and is 0.007 or lower; and forming an oxide film on a surface of a silicon substrate by using the plasma.
Public/Granted literature
- US20090085171A1 OXIDE FILM FORMATION METHOD AND IMAGE SENSING APPARATUS Public/Granted day:2009-04-02
Information query
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