Methods of forming patterned photoresist layers over semiconductor substrates

Invention Grant

US07985698B2 Methods of forming patterned photoresist layers over semiconductor substrates 有权

Title translation: 在半导体衬底上形成图案化光致抗蚀剂层的方法

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Patent Title: Methods of forming patterned photoresist layers over semiconductor substrates
Patent Title (中): 在半导体衬底上形成图案化光致抗蚀剂层的方法
Application No.: US11481493

Application Date: 2006-07-05
Publication No.: US07985698B2

Publication Date: 2011-07-26
Inventor: Jon P. Daley
Applicant: Jon P. Daley
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: Wells St. John P.S.
Main IPC: H01L21/47
IPC: H01L21/47 ; G03C5/00

Abstract:

This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has an outer surface. The outer surface is treated with a basic fluid. A positive photoresist is applied onto the outer surface which has been treated with the basic treating fluid. The positive photoresist is patterned and developed effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface. Other aspects and implementations are contemplated.

Abstract(Chinese):

本发明包括在半导体衬底上形成图案化光刻胶层的方法。在一个实施方式中，提供半导体衬底。在半导体衬底上形成抗反射涂层。抗反射涂层具有外表面。外表面用碱性流体处理。将正性光致抗蚀剂施加到已经用碱性处理液处理的外表面上。正性光致抗蚀剂被图案化和显影有效以形成图案化的光致抗蚀剂层，其在所述层的基底区域具有增加的底脚，而不是在不存在所述外表面处理的情况下发生的。考虑了其他方面和实现。

Public/Granted literature

US20060252277A1 Methods of forming patterned photoresist layers over semiconductor substrates Public/Granted day:2006-11-09

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/47	.......有机层，例如光刻胶（H01L21/475，H01L21/4757优先）